The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Jun. 10, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Chan-Hong Chern, Palo Alto, CA (US);

Tysh-Bin Liu, Hsinchu County, TW;

Kun-Lung Chen, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H02M 3/07 (2006.01); H03K 17/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); H02M 3/07 (2013.01); H03K 17/063 (2013.01); H03K 2217/0081 (2013.01);
Abstract

Devices, systems, and methods are provided for generating a high, dynamic voltage boost. An integrated circuit (IC) includes a driving circuit having a first stage and a second stage. The driving circuit is configured to provide an overdrive voltage. The IC also includes a charge pump circuit coupled between the first stage and the second stage. The charge pump circuit is configured generate a dynamic voltage greater than the overdrive voltage. The IC also includes a bootstrap circuit coupled to the charge pump circuit, configured to further dynamically boost the overdrive voltage of the driving circuit.


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