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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11038041 B1

PDFFull Text
Date of Patent:
Jun. 15, 2021

Filed:

Oct. 24, 2017

Composite spacer enabling uniform doping in recessed fin devices

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Veeraraghavan S. Basker, Schenectady, NY (US);

Zuoguang Liu, Schenectady, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Chun-Chen Yeh, Clifton Park, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Robert Sullivan

Primary Examiner:

Steven M Christopher

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/268 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/2022 (2013.01); H01L 21/2251 (2013.01); H01L 21/268 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/324 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/1608 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor device that includes at least one fin structure and a gate structure present on a channel portion of the fin structure. An epitaxial semiconductor material is present on at least one of a source region portion and a drain region portion on the fin structure. The epitaxial semiconductor material includes a first portion having a substantially conformal thickness on a lower portion of the fin structure sidewall and a second portion having a substantially diamond shape that is present on an upper surface of the source portion and drain portion of the fin structure. A spacer present on first portion of the epitaxial semiconductor material.

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