The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Aug. 30, 2018
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Toshimi Hitora, Kyoto, JP;
Masaya Oda, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02581 (2013.01); H01L 21/02587 (2013.01); H01L 21/02628 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H01L 21/02631 (2013.01);
Abstract
Provided is a crystalline multilayer structure having good semiconductor properties. The crystalline multilayer structure includes a base substrate and a corundum-structured crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide semiconductor thin film is 0.1 μm or less in a surface roughness (Ra).