The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Oct. 07, 2019
Stmicroelectronics SA, Montrouge, FR;
Philippe Galy, Le Touvet, FR;
Renan Lethiecq, Bernin, FR;
STMICROELECTRONICS S.A., Montrouge, FR;
Abstract
An exemplary semiconductor memory includes a channel region disposed in a semiconductor body, a gate region overlying the channel region, a first and a second source/drain region disposed in the semiconductor body, where the first source/drain region is spaced from the second source/drain region by the channel region. The exemplary memory further includes a first contact electrically contacting the first source/drain region, a second contact electrically contacting the first source/drain region and spaced from the second contact, and a third contact electrically contacting the second source/drain region. The first and second contacts are configured so that a resistivity of the first source/drain region can be irreversibly increased by application of an electric current between the first and second contacts. The first contact extends over a first width, the third contact extends over a third width, where the first width is smaller than the third width.