The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Jun. 29, 2012
Mark T. Bohr, Aloha, OR (US);
Stephen M. Cea, Hillsboro, OR (US);
Barbara A. Chappell, Hillsboro, OR (US);
Mark T. Bohr, Aloha, OR (US);
Stephen M. Cea, Hillsboro, OR (US);
Barbara A. Chappell, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Through gate fin isolation for non-planar transistors in a microelectronic device, such as an integrated circuit (IC). In embodiments, ends of adjacent semiconductor fins are electrically isolated from each other with an isolation region that is self-aligned to gate electrodes of the semiconductor fins enabling higher transistor packing density and other benefits. In an embodiment, a single mask is employed to form a plurality of sacrificial placeholder stripes of a fixed pitch, a first subset of placeholder stripes is removed and isolation cuts made into the semiconductor fins in openings resulting from the first subset removal while a second subset of the placeholder stripes is replaced with gate electrodes.