The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Sep. 03, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Xuebin Li, Sunnyvale, CA (US);

Schubert S. Chu, San Francisco, CA (US);

Errol Antonio C. Sanchez, Tracy, CA (US);

Patricia M. Liu, Saratoga, CA (US);

Gaurav Thareja, Santa Clara, CA (US);

Raymond Hoiman Hung, Palo Alto, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/321 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/0206 (2013.01); H01L 21/02043 (2013.01); H01L 21/02068 (2013.01); H01L 21/321 (2013.01); H01L 29/665 (2013.01);
Abstract

The systems and methods discussed herein are for a cluster tool that can be used for MOSFET device fabrication, including NMOS and PMOS devices. The cluster tool includes process chambers for pre-cleaning, metal-silicide or metal-germanide film formation, and surface protection operations such as capping and nitridation. The cluster tool can include one or more process chambers configured to form a source and a drain. The devices fabricated in the cluster tool are fabricated to have at least one protective layer formed over the metal-silicide or metal-germanide film to protect the film from contamination during handling and transfer to separate systems.


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