IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11037786 B1

PDFFull Text
Date of Patent:
Jun. 15, 2021

Filed:

May. 06, 2019

Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (euv) lithography

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ekmini Anuja De Silva, Slingerlands, NY (US);

Dario Goldfarb, Dobbs Ferry, NY (US);

Nelson Felix, Slingerlands, NY (US);

Daniel Corliss, Waterford, NY (US);

Rudy J. Wojtecki, San Jose, CA (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Abdy Raissinia

Ryan, Mason & Lewis, LLP

Primary Examiner:

Patricia D Reddington

Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/033 (2006.01); G03F 7/26 (2006.01); G03F 7/20 (2006.01); G03F 7/09 (2006.01); H01L 21/3213 (2006.01); H01L 21/308 (2006.01); G03F 7/11 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/2004 (2013.01); G03F 7/26 (2013.01); H01L 21/0273 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/3081 (2013.01); H01L 21/32139 (2013.01); G03F 7/092 (2013.01); G03F 7/11 (2013.01); H01L 21/0332 (2013.01); H01L 43/12 (2013.01);
Abstract

A semiconductor structure includes a semiconductor substrate and a multi-layer patterning material film stack formed on the semiconductor substrate. The patterning material film stack includes a resist layer formed over one or more additional layers. The semiconductor structure further includes a metal-containing top coat formed over the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

Find Patent Forward Citations

Loading…