The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Feb. 05, 2020
Applicant:

Nuflare Technology, Inc., Yokohama, JP;

Inventors:

Takahito Nakayama, Chigasaki, JP;

Yuji Abe, Yokohama, JP;

Assignee:

NuFlare Technology, Inc., Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/304 (2006.01);
U.S. Cl.
CPC ...
H01J 37/304 (2013.01); H01J 37/3174 (2013.01);
Abstract

A charged particle beam writing apparatus includes a writer writing a pattern on a surface of a substrate using a charged particle beam, a measurement unit measuring a height of the surface of a central portion of the substrate at a plurality of positions in the central portion, a generator performing fitting using a first polynomial on measurement values from the measurement unit, calculating, by extrapolation using the first polynomial, a first height distribution of the height of the surface of a peripheral portion of the substrate, performing fitting using a second polynomial, which is of a higher order than the first polynomial, on the measurement values, calculating a second height distribution of the height of the surface of the central portion by interpolation using the second polynomial, and generating a height distribution of the substrate by combining the first height distribution and the second height distribution, and a controller adjusting a focal position of the charged particle beam based on the height of the surface at a writing position, the height being calculated from the height distribution of the substrate.


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