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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11031546 B1

PDFFull Text
Date of Patent:
Jun. 08, 2021

Filed:

Nov. 19, 2018

Method of integration of a magnetoresistive structure

Applicant:

Everspin Technologies, Inc., Chandler, AZ (US);

Inventors:

Kerry Joseph Nagel, Scottsdale, AZ (US);

Kenneth H. Smith, Chandler, AZ (US);

Moazzem Hossain, Chandler, AZ (US);

Sanjeev Aggarwal, Scottsdale, AZ (US);

Assignee:

Everspin Technologies, Inc., Chandler, AZ (US);

Attorney:

Bookoff McAndrews, PLLC

Primary Examiner:

Eric A Ward

Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 21/28568 (2013.01); H01L 21/32133 (2013.01); H01L 21/7684 (2013.01); H01L 21/76877 (2013.01); H01L 27/222 (2013.01); H01L 27/226 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 21/76819 (2013.01); H01L 27/228 (2013.01);
Abstract

A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.

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