The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Jun. 11, 2019
Infineon Technologies Ag, Neubiberg, DE;
Andreas Huerner, Nuremberg, DE;
Dethard Peters, Hoechstadt, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A SiC semiconductor device includes a first load electrode, a normally-on junction field effect transistor, and an insulated gate field effect transistor. The normally-on junction field effect transistor includes a channel region electrically connected to the first load electrode. The insulated gate field effect transistor and the normally-on junction field effect transistor are electrically connected in series. The insulated gate field effect transistor includes a source region and a body region. The source region is electrically connected to a channel region of the normally-on junction field effect transistor. The body is electrically connected to the first load electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile