The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Aug. 14, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jacklyn Chang, San Ramon, CA (US);

Derek C. Tao, Fremont, CA (US);

Kuo-Yuan Hsu, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 27/1052 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A memory device is disclosed that includes memory cell, e strap cell, conductive segment, and logic cell. The strap cell is arranged abutting the memory cell. The strap cell includes an active region, a first gate, and a second gate. The first gate is arranged across the active region. The second gate is arranged across the active region and disposed at the end of active region. The conductive segment is disposed over the first gate and the second gate. The strap cell is disposed between the memory cell and the logic cell, and the logic cell includes a third gate. The conductive segment is spaced apart from the third gate, and the length of the conductive segment is smaller than five times of a gate pitch between the first gate and the second gate.


Find Patent Forward Citations

Loading…