The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Aug. 13, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a method of manufacturing a semiconductor device, an isolation region is formed in a substrate, such that the isolation region surrounds an active region of the substrate in plan view. A first dielectric layer is formed over the active region. A mask layer is formed on a gate region of the first dielectric layer. The gate region includes a region where a gate electrode is to be formed. The mask layer covers the gate region, but does not entirely cover the first dielectric layer. The first dielectric layer not covered by the mask layer is removed such that a source-drain region of the active region is exposed. After that, the mask layer is removed. A second dielectric layer is formed so that a gate dielectric layer is formed. The gate electrode is formed over the gate dielectric layer.