The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Jun. 04, 2019
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventor:

Ke Dong, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 23/544 (2013.01); H01L 2223/54426 (2013.01);
Abstract

According to various embodiments, a semiconductor device may include: a semiconductor substrate; a deep trench extending from a first portion of the semiconductor substrate to a second portion of the semiconductor substrate, wherein the second portion underlies the first portion; and an insulator region at least substantially lining sides of the deep trench. The insulator region includes at least one shallow trench in the first portion of the semiconductor substrate. At least a portion of the shallow trench(es) is arranged over at least a portion of the deep trench.


Find Patent Forward Citations

Dong, Ke. (2021). Semiconductor devices and methods of fabricating a deep trench isolation structure (U.S. Patent No. 11031281). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11031281

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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