The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Jan. 13, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Meng-Je Chuang, Hsin-Chu, TW;

Wan-Chun Kuan, Chiayi, TW;

Yi-Wei Chiu, Kaohsiung, TW;

Tzu-Chan Weng, Kaohsiung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/3065 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32009 (2013.01); H01J 37/3244 (2013.01); H01L 21/3065 (2013.01); H01L 21/6719 (2013.01); H01L 21/67069 (2013.01); H01L 21/67103 (2013.01); H01L 21/67126 (2013.01); H01L 21/67201 (2013.01); H01J 2237/334 (2013.01); H01L 21/823431 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01);
Abstract

A chamber door, such as an etch chamber door may be heated during etch processing to, e.g., prevent etching by-products from adhering to the etch chamber door. Such heating of the etch chamber door, however, can impact the processing parameters and result in non-uniform processing, such as non-uniform etching characteristics across a semiconductor wafer, for instance. An insulator, such as an insulating film covering surfaces of the heated door, can reduce or eliminate transmission of heat from the door to a work piece such as a semiconductor wafer and this reduce or eliminate the non-uniformity of the process results.


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