The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Sep. 11, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yuan He, Boise, ID (US);

Yutaka Ito, Tokyo, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/406 (2006.01); G11C 11/409 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40626 (2013.01); G11C 11/409 (2013.01); G11C 11/40615 (2013.01); G11C 11/40622 (2013.01); G11C 2211/4065 (2013.01);
Abstract

Methods of operating a memory device are disclosed. A method may include determining an operating temperature of a memory bank of a memory device. The method may also include adjusting at least one refresh interval for the memory bank based on the operating temperature of the memory bank. Further, the method may include skipping at least one refresh of the memory bank based on at least one of the operation temperature of the memory bank and a number of active signals received at the memory bank. A memory device and an electronic system are also described.


Find Patent Forward Citations

He, Yuan. (2021). Methods for adjusting memory device refresh operations based on memory device temperature, and related memory devices and systems (U.S. Patent No. 11031066). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11031066

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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