The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
May. 26, 2020
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chun-Yao Ku, Taipei, TW;
Wen-Hao Chen, Hsin-Chu, TW;
Ming-Tao Yu, Hsinchu, TW;
Shao-Huan Wang, Taichung, TW;
Jyun-Hao Chang, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of forming an integrated device includes: providing a first via pillar file specifying a first via pillar; providing a second via pillar file specifying a second via pillar; arranging, by a processor, the first via pillar to electrically connect to a circuit cell in a first circuit; arranging an interconnecting path for electrical connection of the first via pillar to another circuit cell in the first circuit; arranging, by the processor, the second via pillar to replace the first via pillar when the first via pillar induces an electromigration (EM) phenomenon; re-routing the interconnecting path with replacement of the first via pillar to generate a second circuit when the first via pillar induces the EM phenomenon; and generating the integrated device according to the second circuit.