The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Sep. 27, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Hua Liu, Hsinchu County, TW;
Yun-Xiang Lin, Hsinchu County, TW;
Yuan-Te Hou, Hsinchu, TW;
Chung-Hsing Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method is utilized to calculate a boundary leakage in a semiconductor device. A boundary is detected between a first cell and a second cell, which the first cell and the second cell are abutted to each other around the boundary. Attributes associated with cell edges of the first cell and the second cell are identified. A cell abutment case is identified based on the attributes associated with the cell edges of the first cell and the second cell. An expected boundary leakage between the first cell and the second cell is calculated based on leakage current values associated with the cell abutment case and leakage probabilities associated with the cell abutment case.