The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Nov. 26, 2018
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Yasuharu Nakai, Nagaokakyo, JP;

Katsuya Daimon, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/64 (2006.01); H03H 9/02 (2006.01); H03H 9/25 (2006.01); H03H 9/72 (2006.01); H04B 1/40 (2015.01); H03H 9/145 (2006.01); H03F 3/195 (2006.01); H03F 3/72 (2006.01); H03F 3/24 (2006.01); H04B 1/00 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03H 9/6489 (2013.01); H03F 3/195 (2013.01); H03F 3/245 (2013.01); H03F 3/72 (2013.01); H03H 9/02559 (2013.01); H03H 9/02637 (2013.01); H03H 9/02937 (2013.01); H03H 9/145 (2013.01); H03H 9/25 (2013.01); H03H 9/6483 (2013.01); H03H 9/6496 (2013.01); H03H 9/725 (2013.01); H04B 1/0057 (2013.01); H04B 1/40 (2013.01); H03F 3/19 (2013.01); H03F 3/21 (2013.01); H03F 2200/111 (2013.01); H03F 2200/165 (2013.01); H03F 2200/171 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H03F 2203/7209 (2013.01); H03H 9/02834 (2013.01);
Abstract

A first filter of a multiplexer includes serial resonators and parallel resonators that are acoustic wave resonators. A first of the serial resonators that is closer to a common terminal than the other serial resonators is connected to the common terminal without the parallel resonators interposed therebetween. Each of the elastic wave resonators includes a substrate having piezoelectricity, an IDT electrode provided on the substrate, and a dielectric layer provided on the substrate to cover the IDT electrode. A thickness of the dielectric layer of the first serial resonator is smaller than a thickness of each of the dielectric layers of the remainder of the elastic wave resonators.


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