The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Mar. 19, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Aryan Afzalian, Chastre, BE;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device includes forming a first source/drain region in a substrate. A core channel region is formed on the first source/drain region. A barrier layer is formed on the core channel region. A shell is formed lining sidewalls of the core channel region and sidewalls and top surface of the barrier layer. The shell includes a channel portion in contact with the core channel region and a barrier portion in contact with the barrier layer. A second source/drain region is formed above the shell. A first gate electrode is formed to surround the channel portion of the shell. A conduction energy band of the channel portion of the shell is aligned with a conduction energy band of the barrier portion of the shell.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile