The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Sep. 06, 2019
Toshiba Memory Corporation, Tokyo, JP;
Tomoaki Sawabe, Taito Tokyo, JP;
Nobuyoshi Saito, Ota Tokyo, JP;
Junji Kataoka, Kawasaki Kanagawa, JP;
Tomomasa Ueda, Yokohama Kanagawa, JP;
Keiji Ikeda, Kawasaki Kanagawa, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor device of an embodiment includes a first electrode, a second electrode, an oxide semiconductor channel, an insulation layer, an oxide layer, and a gate electrode. The oxide semiconductor channel includes a portion extending along a first direction and connects the first electrode to the second electrode. The insulation layer surrounds the oxide semiconductor channel. The oxide layer covers the oxide semiconductor channel and the insulation layer, and includes an oxide of a metal element. The gate electrode covers the oxide semiconductor channel, the insulation layer, and the oxide layer, and includes the metal element.