The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Aug. 31, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Jumpei Tajima, Mitaka, JP;
Toshiki Hikosaka, Kawasaki, JP;
Kenjiro Uesugi, Kawasaki, JP;
Masahiko Kuraguchi, Yokohama, JP;
Shinya Nunoue, Ichikawa, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
In one embodiment, a semiconductor device is provided with a substrate, a first nitride semiconductor layer above the substrate, a second nitride semiconductor layer which is provided on the first nitride semiconductor layer and is in contact with the first nitride semiconductor layer, a source electrode provided between the substrate and the first nitride semiconductor layer and electrically connected to the first nitride semiconductor layer, a drain electrode provided on the second nitride semiconductor layer and electrically connected to the second nitride semiconductor layer, a gate insulating layer provided at least between the substrate and the first nitride semiconductor layer, a gate electrode between the substrate and the gate insulating layer, and a first insulating layer between the substrate and the gate insulating layer to cover the gate electrode and the source electrode.