The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Dec. 10, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Cheng-Ta Wu, Chiayi County, TW;

Yi-Hsien Lee, Kaohsiung, TW;

Wei-Ming You, Taipei, TW;

Ting-Chun Wang, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/167 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/167 (2013.01); H01L 29/0649 (2013.01); H01L 29/49 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 21/0262 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01);
Abstract

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a substrate; a fin structure, disposed over the substrate; a gate structure, disposed over the substrate and covering a portion of the fin structure; a first sidewall, disposed over the substrate and surrounding a lower portion of the gate structure; and a second sidewall, disposed over the first sidewall and directly surrounding an upper portion of the gate structure, wherein the first sidewall is orthogonal to the second sidewall.


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