The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Feb. 26, 2020
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Wei-Chun Chang, Fujian, CN;
Han-Min Huang, Hsinchu, TW;
You-Di Jhang, New Taipei, TW;
Wen Yi Tan, Fujian, CN;
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Abstract
A manufacturing method of a capacitor structure includes the following steps. A first capacitor is formed on a substrate. The first capacitor includes a first electrically conductive pattern and a second electrically conductive pattern of a first electrically conductive layer and a first dielectric layer disposed therebetween in a horizontal direction. A second capacitor is formed on the substrate before forming the first capacitor. The second capacitor includes a third electrically conductive pattern and a fourth electrically conductive pattern of a second electrically conductive layer and a second dielectric layer disposed therebetween in the horizontal direction. A thickness of the second electrically conductive layer is monitored. A target value of a thickness of the first electrically conductive layer is controlled in accordance with a value of a monitored thickness of the second electrically conductive layer.