The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Feb. 09, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hideaki Sato, Kumamoto, JP;

Jinhyun Kim, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/306 (2013.01); H01L 21/30604 (2013.01); H01L 21/31105 (2013.01); H01L 21/67075 (2013.01);
Abstract

In a substrate liquid processing method for performing an etching process by bringing an etching liquid for removing a coating film into contact with a surface of a substrate having a recess and covered with a coating film inside and outside the recess, the substrate liquid processing method includes: a first coating film removal step of setting the etching liquid to a first temperature so as to attain a first etching rate and removing the coating film outside the recess in a first process time; and thereafter, a second coating film removal step of setting the etching liquid to a second temperature so as to attain a second etching rate lower than the first etching rate and removing the coating film outside the recess in the second process time while leaving the coating film inside the recess.


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