The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Dec. 14, 2018
Applicant:

Synopsys, Inc., Mountain View, CA (US);

Inventors:

Parikshit Kulkarni, Tampa, FL (US);

Dan Hung, Mountain View, CA (US);

John Gookassian, Mountain View, CA (US);

Assignee:

SYNOPSYS, INC., Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05B 19/418 (2006.01); G03F 1/44 (2012.01); G03F 1/50 (2012.01);
U.S. Cl.
CPC ...
G05B 19/41885 (2013.01); G03F 1/44 (2013.01); G03F 1/50 (2013.01); G05B 2219/32128 (2013.01); G05B 2219/32335 (2013.01); G05B 2219/45031 (2013.01);
Abstract

An image-based Artificial Neural Networks (ANN) is used for photomask modeling, which can self-construct an internal representation of the photomask manufacturing process, therefore allowing the modeling process to become unfettered by the limitations of existing mathematical/statistical tools, thus greatly reduces/eliminates the effort needed from tedious and costly model-builders. The ANN model requires mask layout data converted into image pixel form. In ANN training phase a first circuit image and its existing SEM image are modeled via multiple layers of convolution and rectification to pick out the salient features of transformed image. In ANN testing phase, a second circuit image and its existing SEM image are compared and verified to have a difference smaller than the predetermined requirement. The satisfactory second circuit image is converted back from pixel form to circuit layout data for photomask writing.


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