The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Oct. 18, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Xi-Zong Chen, Tainan, TW;
Cha-Hsin Chao, Taipei, TW;
Yi-Wei Chiu, Kaohsiung, TW;
Li-Te Hsu, Tainan, TW;
Chih-Hsuan Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Co.. Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a method for improving post-photolithography critical dimension (CD) uniformity for features printed on a photoresist. A layer can be formed on one or more printed features and subsequently etched to improve overall CD uniformity across the features. For example the method includes a material layer disposed over a substrate and a photoresist over the material layer. The photoresist is patterned to form a first feature with a first critical dimension (CD) and a second feature with a second CD that is larger than the first CD. Further, a layer is formed with one or more deposition/etch cycles in the second feature to form a modified second CD that is nominally equal to the first CD.