The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Feb. 13, 2018
Applicant:

Siltronic Ag, Munich, DE;

Inventor:

Thomas Schroeck, Kastl, DE;

Assignee:

SILTRONIC AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 13/24 (2006.01); C30B 13/30 (2006.01); C30B 13/32 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 13/30 (2013.01); C30B 13/24 (2013.01); C30B 13/32 (2013.01); C30B 29/06 (2013.01);
Abstract

FZ single crystals are pulled by melting a polycrystal with electromagnetic melting apparatus and then recrystallizing. First, a lower end of the polycrystal is melted; second, a monocrystalline seed is attached to the lower end of the polycrystal and melted beginning from an upper end thereof; third, between a lower section of the seed and the polycrystal, a thin neck is formed whose diameter (d) is smaller than that (d) of the seed; and fourth, between the thin neck section and the polycrystal, a conical section is formed. Before the conical growth, a switchover position (h') of the polycrystal, the position at which the rate of polycrystal movement relative to the melting apparatus is to be reduced is determined, and the rate is reduced, in amount when the switchover position (h′) is reached.


Find Patent Forward Citations

Loading…