The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Nov. 29, 2018
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3485 (2013.01); C23C 14/0036 (2013.01); C23C 14/0641 (2013.01); H01L 21/0217 (2013.01); H01L 21/02175 (2013.01); H01L 21/02178 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01); H01L 21/02266 (2013.01); H01L 21/32051 (2013.01);
Abstract
A sputtering method of forming a thin film by allowing a target material to react with a gas includes narrowing down film deposition conditions from an existing period of nitrogen radicals by focusing on a nitriding process in thin-film forming processes when the thin film is formed by pulsing a waveform of electric current from a DC power supply at the time of generating plasma and applying the electric current to the target material.