The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Jul. 01, 2017
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Christopher W. Petz, Boise, ID (US);
David R. Economy, Boise, ID (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/2409 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/1608 (2013.01);
Abstract
A phase change memory structure () includes a phase change material layer (), a top electrode layer () above the phase change material layer, a metal silicon nitride layer () in contact with the top electrode layer opposite from the phase change material layer, a metal silicide layer () in contact with the metal silicon nitride layer opposite from the top electrode layer, and a conductive metal bit line () in contact with the metal silicide layer opposite from the metal silicon nitride layer.