The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Jul. 14, 2017
Minehide Kusayanagi, Kanagawa, JP;
Naoyuki Ueda, Kanagawa, JP;
Yuki Nakamura, Tokyo, JP;
Yukiko Abe, Kanagawa, JP;
Shinji Matsumoto, Kanagawa, JP;
Yuji Sone, Kanagawa, JP;
Ryoichi Saotome, Kanagawa, JP;
Sadanori Arae, Kanagawa, JP;
Minehide Kusayanagi, Kanagawa, JP;
Naoyuki Ueda, Kanagawa, JP;
Yuki Nakamura, Tokyo, JP;
Yukiko Abe, Kanagawa, JP;
Shinji Matsumoto, Kanagawa, JP;
Yuji Sone, Kanagawa, JP;
Ryoichi Saotome, Kanagawa, JP;
Sadanori Arae, Kanagawa, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed between the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, the source electrode and the drain electrode each including a metal region formed of a metal and an oxide region formed of one or more metal oxides, and a part of the oxide region in each of the source electrode and the drain electrode being in contact with the active layer, and rest of the oxide region being in contact with one or more components other than the active layer.