The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Apr. 13, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL CHIAO TUNG UNIVERSITY, Hsinchu, TW;
Abstract
A semiconductor device includes a channel, source/drain structures, and a gate stack. The source/drain structures are on opposite sides of the channel. The gate stack is over the channel, and the gate stack includes a gate dielectric layer, a doped ferroelectric layer, and a gate electrode. The gate dielectric layer is over the channel. The doped ferroelectric layer is over the gate dielectric layer. The gate electrode is over the doped ferroelectric layer. A dopant concentration of the doped ferroelectric layer varies in a direction from the gate electrode toward the channel.