The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Jul. 26, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Bo-Wen Hsieh, Miaoli County, TW;

Wen-Hsin Chan, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42372 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate and a gate structure. The semiconductor substrate includes a first semiconductor fin and a second semiconductor fin. The gate structure includes a work function metal structure crossing over the first semiconductor fin and the second semiconductor fin. The work function metal structure comprises a first portion over a portion of the first semiconductor fin, a second portion over a portion of the second semiconductor fin, and a third portion connecting the first portion to the second portion, wherein a thickness of the third portion is smaller than a thickness of the second portion and greater than a thickness of the first portion along an extension direction of the second semiconductor fin.


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