The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Apr. 29, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Aryan Afzalian, Chastre, BE;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1045 (2013.01); H01L 29/0847 (2013.01); H01L 29/0895 (2013.01); H01L 29/105 (2013.01); H01L 29/1054 (2013.01); H01L 29/42392 (2013.01); H01L 29/66462 (2013.01); H01L 29/66492 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/7834 (2013.01); H01L 29/7835 (2013.01);
Abstract
A semiconductor device includes a source region, a drain region, a core channel region, and a barrier layer. The core channel region is between the source region and the drain region. The barrier layer is between the core channel region and the drain region. The barrier layer is a graded doped barrier layer.
Afzalian, Aryan. (2021). Semiconductor device and manufacturing method thereof (U.S. Patent No. 11018226). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11018226
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile