The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Mar. 15, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Seiji Nonoguchi, Kanagawa, JP;

Katsuhisa Aratani, Kanagawa, JP;

Kazuhiro Ohba, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/24 (2006.01); H01L 23/528 (2006.01); H01L 27/11514 (2017.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 23/528 (2013.01); H01L 27/11514 (2013.01); H01L 27/224 (2013.01); H01L 27/2409 (2013.01);
Abstract

A storage apparatus includes a plurality of first wiring layers extending in one direction, a plurality of second wiring layers extending in another direction, and a plurality of memory cells provided in respective opposing regions in which the plurality of first wiring layers and the plurality of second wiring layers are opposed to each other. The plurality of memory cells each includes a selector element layer, a storage element layer, and an intermediate electrode layer provided between the selector element layer and the storage element layer. One or more of the selector element layer, the storage element layer, and the intermediate electrode layer is a common layer that is common between the plurality of memory cells, in which the plurality of memory cells is adjacent to each other and extends in the one direction or the other direction. The intermediate electrode layer includes a nonlinear resistive material.


Find Patent Forward Citations

Loading…