The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Jan. 22, 2018
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventor:

Peter Wright, Sunnyvale, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/00 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 24/05 (2013.01); H01L 27/0288 (2013.01); H01L 27/0292 (2013.01); H01L 27/14607 (2013.01); H01L 27/14623 (2013.01); H01L 27/14643 (2013.01); H01L 24/06 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/06131 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/06137 (2013.01); H01L 2924/00014 (2013.01);
Abstract

Techniques of drawing ESD current away from an image sensor device of a CMOS image sensor die include using a light shield configured to block light from an image sensor device. The light shield may be used to draw the ESD current away when it has an electrical connection to an ESD ground bus and/or to a bond pad of the CMOS image sensor die. Advantageously, the light shield has a low resistance due to its large surface area. Accordingly, parallel connections to the bond pads and/or ESD bus have a resistance close to the low resistance of the light shield without altering the size of the die.


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