The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Aug. 19, 2019
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Chang Lu, Yunlin County, TW;

Wen-Jer Tsai, Hualien, TW;

Guan-Wei Wu, Zhubei, TW;

Yao-Wen Chang, Zhubei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 29/36 (2006.01); H01L 29/10 (2006.01); H01L 23/528 (2006.01); H01L 21/265 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02636 (2013.01); H01L 21/26513 (2013.01); H01L 23/528 (2013.01); H01L 29/1037 (2013.01); H01L 29/36 (2013.01); H01L 29/40117 (2019.08); H01L 29/513 (2013.01);
Abstract

A memory device includes a conductive strip stack structure having conductive strips and insulating layers stacked in a staggered manner and a channel opening passing through the conductive strips and the insulating layer; a memory layer disposed in the channel opening and overlying the conductive strips; a channel layer overlying the memory layer; a semiconductor pad extending upwards from a bottom of the channel opening beyond an upper surface of a bottom conductive strip, in contact with the channel layer, and electrically isolated from the conductive strips; wherein the channel layer includes a first portion having a first doping concentration and a second portion having a second doping concentration disposed on the first portion.


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