The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Jun. 17, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Beomyong Hwang, Seoul, KR;
Min Hee Cho, Suwon-si, KR;
Hei Seung Kim, Suwon-si, KR;
Mirco Cantoro, Hwaseong-si, KR;
Hyunmog Park, Seoul, KR;
Woo Bin Song, Hwaseong-si, KR;
Sang Woo Lee, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor memory device includes a substrate, a first active pattern on the substrate, a gate electrode intersecting a channel region of the first active pattern, a first insulating layer covering the first active pattern and the gate electrode, a contact penetrating the first insulating layer so as to be electrically connected to a first source/drain region of the first active pattern, and a second active pattern on the first insulating layer. A channel region of the second active pattern vertically overlaps with the contact.