The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Sep. 30, 2016
Applicant:
Rohm and Haas Electronic Materials Korea Ltd., Cheonan, Chungcheongnam-Do, KR;
Inventors:
Chang-Young Hong, Chungcheongnam-Do, KR;
Eui Hyun Ryu, Chungcheongnam-Do, KR;
Min-Kyung Jang, Chungcheongnam-Do, KR;
Dong-Yong Kim, Chungcheongnam-Do, KR;
Assignee:
Rohm and Haas Electronic Materials Korea Ltd., Chungcheongnam-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/30 (2006.01); C08F 222/22 (2006.01); C08F 222/24 (2006.01); G03F 7/11 (2006.01); G03F 7/32 (2006.01); C08F 220/38 (2006.01); C07C 271/12 (2006.01); C07D 211/48 (2006.01); C08F 220/16 (2006.01); C08F 220/28 (2006.01); C09D 133/14 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C07C 271/12 (2013.01); C07D 211/48 (2013.01); C08F 220/16 (2013.01); C08F 220/28 (2013.01); C08F 220/38 (2013.01); C08F 222/22 (2013.01); C08F 222/24 (2013.01); C09D 133/14 (2013.01); G03F 7/0045 (2013.01); G03F 7/162 (2013.01); G03F 7/2041 (2013.01); G03F 7/325 (2013.01); G03F 7/40 (2013.01); C08F 2220/283 (2013.01);
Abstract
Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.