The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Dec. 05, 2019
Applicant:

Hoya Corporation, Tokyo, JP;

Inventors:

Atsushi Kominato, Tokyo, JP;

Osamu Nozawa, Tokyo, JP;

Assignee:

HOYA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/32 (2012.01); G03F 1/74 (2012.01); G03F 1/54 (2012.01); C23C 14/06 (2006.01); C23C 14/58 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 1/32 (2013.01); C23C 14/06 (2013.01); C23C 14/0676 (2013.01); C23C 14/5806 (2013.01); G03F 1/54 (2013.01); G03F 1/74 (2013.01); G03F 7/2006 (2013.01); H01L 21/0275 (2013.01);
Abstract

A mask blank including a phase shift film is provided, wherein the phase shift film has a transmittance with respect to exposure light of an ArF excimer laser of not less than 10% and not more than 20% and is configured to transmit the exposure light to have a phase difference of not less than 150 degrees and not more than 190 degrees with respect to exposure light transmitted through the air for the same distance as a thickness of the phase shift film. A ratio of the metal content to the total content of the metal and silicon in the phase shift film is not less than 5% and not more than 10%, the oxygen content in the phase shift film is 10 atom % or more, and the silicon content in the phase shift film is three times or more the oxygen content.


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