The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Jul. 09, 2019
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Humberto Campanella-Pineda, Singapore, SG;
Qizhi Liu, Lexington, MA (US);
Vibhor Jain, Essex Junction, VT (US);
You Qian, Singapore, SG;
Joan Josep Giner de Haro, Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
Structures for transistor-based sensors and related fabrication methods. A layer stack is formed that includes a semiconductor layer and a cavity. A transistor is formed that has a gate electrode over the layer stack, and an interconnect structure is formed over the layer stack and the transistor. First and second openings are formed that extend through the metallization levels of the interconnect structure and the semiconductor layer to the cavity. The first opening defines a fluid inlet coupled to the cavity, and the second opening defines a fluid outlet coupled to the cavity.