The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Dec. 10, 2018
Applicant:

Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;

Inventors:

Myung Mo Sung, Seoul, KR;

Jinwon Jung, Suwon-si, KR;

Jin Seon Park, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); C23C 16/455 (2006.01); C23C 16/44 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
C23C 16/407 (2013.01); C23C 16/4408 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); C23C 16/45557 (2013.01); H01L 21/0262 (2013.01); H01L 21/02554 (2013.01); H01L 29/7869 (2013.01); H01L 21/02488 (2013.01); H01L 29/66969 (2013.01);
Abstract

A layer forming method according to one embodiment of the present invention comprises: a source gas dosing/pressurizing step of dosing a source gas into a chamber having a substrate loaded therein in a state in which the outlet of the chamber is closed, thereby increasing the pressure in the chamber and adsorbing the source gas onto the substrate; a first main purging step of purging the chamber, after the source gas dosing/pressurizing step; a reactive gas dosing step of dosing a reactive gas into the chamber, after the first main purging step; and a second main purging step of purging the chamber, after the reactive gas dosing step.


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