The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Aug. 07, 2019
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Bo-Lun Wu, Tianzhong Township, Changhua County, TW;

Shih-Ning Tsai, Taichung, TW;

Po-Yen Hsu, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1608 (2013.01); H01L 45/146 (2013.01);
Abstract

A memory device includes a first electrode, a resistive switching layer, a cap layer, a protective layer, and a second electrode. The resistive switching layer is disposed over the first electrode. The cap layer is disposed over the resistive switching layer, wherein the bottom surface of the cap layer is smaller than the top surface of the resistive switching layer. The protective layer is disposed over the resistive switching layer and surrounds the cap layer. At least a portion of the second electrode is disposed over the cap layer and covers the protective layer.


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Wu, Bo-Lun. (2021). Memory devices and methods for forming the same (U.S. Patent No. 11011702). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11011702

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