The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Dec. 06, 2018
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventor:

Guowei Zhang, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0607 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/42368 (2013.01);
Abstract

A device which includes a substrate having a device region is provided. The device region may be a high voltage device region. A source region and a drain region are disposed in the substrate within the device region. A gate is arranged over the substrate and between the source region and the drain region. A trench structure having a trench is disposed in the substrate within the device region. The trench structure is arranged on a first side of the gate where a predetermined distance is arranged between the trench structure and the first side of the gate. A well tap region is disposed adjacent to the source region. The well tap region is arranged at least around a bottom and a sidewall of the trench. The well tap region has a deeper depth within the substrate as compared to the source region.


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