Semiconductor structure and method for forming the same

Abstract

A semiconductor structure and a method for forming the same are provided. In one form, the method includes: providing a base, a dummy gate structure being formed on the base, and a source/drain doped layer being formed within the base on both sides of the dummy gate structure; forming a first dielectric layer on the base exposed from the dummy gate structure, the first dielectric layer exposing a portion of a side wall of the dummy gate structure; forming a self-aligned stop layer on at least the side wall of the dummy gate structure exposed from the first dielectric layer; after the self-aligned stop layer is formed, forming a second dielectric layer on the first dielectric layer, and the second dielectric layer and the first dielectric layer being used as interlayer dielectric layers; after the second dielectric layer is formed, replacing the dummy gate structure with a gate structure; etching the interlayer dielectric layer between self-aligned stop layers on side walls of the adjacent gate structures to form a contact exposing the top of the source/drain doped layer; and forming, within the contact, a contact plug electrically connected to the source/drain doped layer. The present disclosure reduces process difficulty in forming a self-aligned contact plug and simplifies a process flow.