The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Oct. 17, 2019
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Ya-Sheng Feng, Tainan, TW;

Yu-Chun Chen, Kaohsiung, TW;

Chiu-Jung Chiu, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); H01F 10/3254 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01);
Abstract

A circuit selector of embedded magnetoresistive random access memory (EMRAM) includes a transistor comprising a source/drain terminal coupled to a first magnetic tunneling junction (MTJ) and a second MTJ, a gate terminal, and a drain/source terminal coupled to a voltage source. Preferably, the first MTJ includes a first free layer, a first barrier layer, and a first pinned layer, in which the first free layer is coupled to the source/drain terminal and the first pinned layer is coupled to a first circuit. The second MTJ includes a second free layer, a second barrier layer, and a second pinned layer, in which the second pinned layer is coupled to the source/drain terminal and the second free layer is coupled to a second circuit.


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