The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Dec. 14, 2018
Texas Instruments Incorporated, Dallas, TX (US);
Mahalingam Nandakumar, Richardson, TX (US);
Robert Callaghan Taft, Munich, DE;
Alan Erik Segervall, Half Moon Bay, CA (US);
Muhammad Yusuf Ali, Allen, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
An electronic device, e.g. an integrated circuit, is formed on a P-type lightly-doped semiconductor substrate having an N-type buried layer. First and second N-wells extend from a surface of the substrate to the buried layer. A first NSD region is located within the first N-well, and a second NSD region is located within the second N-well. A PSD region extends from the substrate surface into the substrate and is located between the first and second NSD regions. A P-type lightly-doped portion of the substrate is located between the N-well and the substrate surface and between the PSD region and the first and second NSD regions.