The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Nov. 26, 2019
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Oliver Hellmund, Neubiberg, DE;
Ingo Muri, Villach, AT;
Johannes Baumgartl, Riegersdorf, AT;
Iris Moder, Villach, AT;
Thomas Christian Neidhart, Klagenfurt, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/762 (2006.01); H01L 29/861 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/764 (2006.01); H01L 29/872 (2006.01); H01L 21/74 (2006.01); H01L 21/28 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76248 (2013.01); H01L 21/28 (2013.01); H01L 21/30608 (2013.01); H01L 21/30625 (2013.01); H01L 21/31111 (2013.01); H01L 21/743 (2013.01); H01L 21/764 (2013.01); H01L 21/76272 (2013.01); H01L 21/76283 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/66136 (2013.01); H01L 29/66143 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H01L 21/31053 (2013.01);
Abstract
A semiconductor device includes a first epitaxial layer, a second epitaxial layer disposed below the first epitaxial layer, a conductive layer disposed below and directly contacting the second epitaxial layer, and a plurality of spacers disposed between the second epitaxial layer and the conductive layer. The conductive layer includes a metal. The plurality of spacers include a bulk semiconductor material.