The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Feb. 27, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventor:

Hsin-Hao Yeh, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/324 (2006.01); H01L 21/268 (2006.01); H01L 21/68 (2006.01); H01L 21/225 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67115 (2013.01); H01L 21/2253 (2013.01); H01L 21/268 (2013.01); H01L 21/324 (2013.01); H01L 21/67248 (2013.01); H01L 21/67259 (2013.01); H01L 21/67294 (2013.01); H01L 21/68 (2013.01); H01L 22/26 (2013.01); H01L 23/544 (2013.01); H01L 22/10 (2013.01); H01L 22/12 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H01L 2223/54493 (2013.01);
Abstract

A method for annealing a semiconductor die is provided. Information regarding layout of the semiconductor die is received. At least one annealing orbit on the semiconductor die is obtained according to the received information. An alignment procedure is performed on a plurality of alignment marks of the semiconductor die according to the received information. The semiconductor die is positioned according to the alignment marks. A laser beam with a first laser parameter is projected onto the positioned semiconductor die along the annealing orbit, so as to anneal a first portion of the positioned semiconductor die covered by the annealing orbit. The positioned semiconductor die is partially covered by the annealing orbit.


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