The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Oct. 02, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Bongsoon Lim, Seoul, KR;

Hojoon Kim, Hwasung-si, KR;

Sang-won Park, Suwon-si, KR;

Sang-won Shim, Seoul, KR;

Wonbo Shim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 8/08 (2006.01); G11C 8/06 (2006.01); G11C 8/14 (2006.01); G11C 5/06 (2006.01); G11C 7/18 (2006.01); G11C 8/18 (2006.01);
U.S. Cl.
CPC ...
G11C 5/025 (2013.01); G11C 5/063 (2013.01); G11C 7/18 (2013.01); G11C 8/06 (2013.01); G11C 8/08 (2013.01); G11C 8/14 (2013.01); G11C 8/18 (2013.01);
Abstract

A semiconductor memory device includes a substrate, first memory cells that are connected to first word lines extending along a first direction and first bit lines extending along a second direction, over the substrate, first conductive materials that are connected to the first word lines and extend from the first word lines along a third direction perpendicular to the first direction and the second direction, second conductive materials that are connected to the first bit lines and extend along the first direction over the first bit lines, and third conductive materials that are connected to the second conductive materials and extend from the second conductive materials along the third direction.


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