The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Sep. 26, 2017
Applicants:

X-fab Semiconductor Foundries Ag, Erfurt, DE;

Melexis Technologies SA, Bevaix, CH;

Inventors:

Klaus Heinrich, Erfurt, DE;

Hartmut Liebing, Erfurt, DE;

Andreas Roth, Erfurt-Urbich, DE;

Stefan Eisenbrandt, Erfurt, DE;

Andreas Ott, Erfurt, DE;

Bruno Boury, Kontich, BE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 29/8605 (2006.01); G01R 17/02 (2006.01); G01R 19/00 (2006.01); G01R 17/16 (2006.01); H01L 49/02 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
G01R 17/02 (2013.01); G01R 17/16 (2013.01); G01R 19/0084 (2013.01); G01R 19/0092 (2013.01); H01L 29/0649 (2013.01); H01L 29/0692 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01); H01L 29/7838 (2013.01); H01L 29/8605 (2013.01); H01L 28/20 (2013.01); H01L 29/402 (2013.01);
Abstract

A high-voltage sensing device providing full galvanic isolation between a high-voltage domain and a low-voltage domain, wherein the circuit topology of the device resembles that of a Wheatstone bridge, the Wheatstone bridge employing at least one voltage-controlled semiconductor resistor, wherein the circuit also comprises a reference source connected directly to the Wheatstone bridge and the device comprises a number of shielding structures to electrically isolate the high-voltage domain from the low-voltage domain.


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